M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control The exposure of the various

The exposure of the various defects found on or in a silicon wafer is often the first critical step in evaluating wafer quality or initiating failure analysis of an errant device structure

It is not intended to specify wafers used in process development or for technology-specific circuit-quality applications

previously published July 2008

is defined

SEMI MF533-0310 (technical revision)

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control The exposure of the variousThis Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon