M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers StdPbc-0317 Such ingots are sliced into

Such ingots are sliced into wafers that are subsequently used for the production of semiconductor devices

SEMI 3D10-0814 (Reapproved 1025)

Knowledge of near-edge geometrical properties can help the producer and consumer determine if the dimensional characteristics of a specimen wafer satisfy given geometrical requirements

and wafer packaging materials

SEMI E23 — Specification for Cassette Transfer Parallel I/O Interface

M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers StdPbc-0317 Such ingots are sliced intoNOTICE: This Standard was balloted and approved for withdrawal in 2021. Compound semiconductor epitaxial layers have been extensively used for many years as the basis of high speed electronics and optoelectronic devices. There are suppliers of epitaxial layers who will grow material to the customers specification. There is a need to define standardized descriptive terms, tolerance schedules and recommended test methods to reduce ambiguity in the