MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 can be used to facilitate

can be used to facilitate inclusion of such additional physical properties and suitable test methods as may be required in the Specification

SEMI G63-95 (first published)

コンピュータおよび通信システム

SEMI F61-0301 (first published)

本スタンダードは，global Gases Technical Committeeで技術的に承認されている。現版は2011年9月12日，global Audits and Reviews Subcommitteeにて発行が承認された。2011年10月にwww

MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 can be used to facilitate1 Purpose 1. 1 Frequently it is essential to control the boron level in heavily doped n type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon substrate interface. 1. 2 SIMS can measure the boron contamination in heavily doped n type substrates. 1. 3 This Test Method can be used for process control, research and development, and materials acceptance purposes. 2 Scope 2. 1 This