M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode StdTpc-Photolithography Metrology SEMI MF1153 — Test Method

SEMI MF1153 — Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

SEMI C30 — Specifications for Hydrogen Peroxide

SEMI 3D20-0921 (technical revision)

SEMI PV87-1018 (first published)

1  This Guide applies to targets that can be used with two common alignment processes—inner surface alignment and outer surface alignment

M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode StdTpc-Photolithography Metrology SEMI MF1153 — Test Method1 Purpose 1. 1 The net carrier density and the resistivity of silicon epitaxial layers are critical parameters in semiconductor device design. Controlling these values during the semiconductor device manufacturing process is essential in determining the devices performance through the margin of the semiconductor device design. 1. 2 This Test Method can be used for research and development, process control, as well as material specification,