M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current BWSs may be classified as

BWSs may be classified as either temporarily bonded (i

This Specification defines the dimensions of container (refer to ¶ 5

This Guide provides recommendations for specifying measurement systems for geometry and flatness of silicon wafers of the 130

The purpose of this Specification is to define a standard description of data

本安全基準適用於由多家公司人員（如設備供應商、廠務設施供應商、使用者及其承攬商）共同使用的工作區。

M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current BWSs may be classified asIn recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high tech devices use more and more epitaxial wafers (p p+, n n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other