GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses Boosting the interfacial superionic conduction

Boosting the interfacial superionic conduction of halide solid electrolytes for all-solid-state batteries

ID:      82 mm

The customer can easily combine up to 10 battery analyzers (0

All pressing dies are made of high-stretched carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

BN Film coated by sputtering method

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses Boosting the interfacial superionic conductionGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: single side polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4470 6540 cm^2 V. S Resistivity: (0. 96 5. 34) x 10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces