Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm Al2O3 Sample Plate

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm Al2O3 Sample PlateSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Please handle the tube carefully

AC 110V Single Phase or AC 220V Single Phase can be selected in the option bar

200 ~ 2400

Digital pressure Gauge ( 60Mpa ) with Alarm  is available upon request ( Click picture to see specs & cost)

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Orientation: (111)B

125" Thick

Reflectivity of SPPC

Conductor type:              P-type

Digital Vacuum Gauge for MTI Furnaces

Thickness: 0

Thickness: 2