Ge single crystal substrate,undoped (100)5x5x0.4-0.5mm,2sp, R>50 ohm.cm Gloveboxes & Dry Rooms Click here to order the

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5 x 103 Crystal cleavage plane none (100) Z (101) (010) no No Growth method Bridgman Bridgman Bridgman CZ CZ Bridgman CZ

Ge single crystal substrate,undoped (100)5x5x0.4-0.5mm,2sp, R>50 ohm.cm Gloveboxes & Dry Rooms Click here to order theSpecifications Growing Method: CZ Wafer Size: 5x5x0. 4 0. 5 mm Surface Polishing: Two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z