Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cm Target A-Z

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cm Target A-ZGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 0007 0. 005 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

The second range: 1 A - 6 A

which can inject two types of solutions (liquid or gas) at the same time

What is Included:

45Single crystal copper metallic substrate

Surface Polishing:          one side epi polished

Sold in qualitity of 30 pieces

Technical Specifications

D 2-3/8"+/- 0

metal-air battery

Working Temperature 1100ºC Max

but 5kg/bag is also avilable upon request

x Height) Case: 26mm(OD) x 25