GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP Model Number EQ-Die-28D-B Maximum Load

Model Number EQ-Die-28D-B Maximum Load 30 metric Ton (at room temperature)

4 pcs per pack

Dielectric constants

It can provide isostatic hydraulic pressure up to 330 MPa to study SSB properties vs

Three ranges of Max

GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP Model Number EQ-Die-28D-B Maximum LoadGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Research Grade Sizes 2 Round Dimensions 50mm + 2mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Conduction Type: n type, Resistivity > 1E6 Ohm cm Front