GaSb Wafer (100), undoped, 2"x0.5 mm ,1sp General Equipment Part Number DF0403C Blade Diameter

Part Number DF0403C Blade Diameter 100 mm  +/-0

111" thick)

Length: 480mm

In general:

Macro Defect Density         <=2 cm-2

GaSb Wafer (100), undoped, 2"x0.5 mm ,1sp General Equipment Part Number DF0403C Blade DiameterWafer Specifications:. Size: 2" diameter x 0. 5mm, Orientation: (100) Dopping: undoped, Conducting type: P type. Polish: one side polished by CMP Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3 Melting point: 710 oC Grown by a special LEC technique , EPD :<10^4 cm2. Carrier concentration: ( 1 3)x10^17 cm^ 3 Mobility: 600 700 cm^2