GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um Target A-Z High-throughput milling jar is available

High-throughput milling jar is available for milling 32 types of sample ( 25 ml max) per batch

Membrane Film Boxes

Impurity:       MgO < 0

39" ( 10 mm )

from damage and contamination during shipping and storing

GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um Target A-Z High-throughput milling jar is availableGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications: Production grade Sizes 2 Round Dimensions 50. 8mm + 0. 25mm Substrate Sapphire, C plane (0001) with 0. 2 degree miscut toward M plane Conduction Type: N type,