50 ohm.cm Battery Consumables Belt driven platen with stableGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754"> 50 ohm.cm Battery Consumables Belt driven platen with stable"> 50 ohm.cm Battery Consumables Belt driven platen with stableGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754"> 50 ohm.cm Battery Consumables Belt driven platen with stable"> 50 ohm.cm Battery Consumables Belt driven platen with stableGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754"> Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm Battery Consumables Belt driven platen with stable – allanportilho.com

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Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm Battery Consumables Belt driven platen with stable

$148.35

Quantity
50 ohm.cm Battery Consumables Belt driven platen with stable">
Description

Belt driven platen with stable and quiet operation

one valve for digital meter

Surface Roughness: < 50 microns

Solid electrolyte/ membrane with prevention against dendrite penetration

5 ms @ 540 nm

Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm Battery Consumables Belt driven platen with stableGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754

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