Ge Substrate (110) 10x10x 0.5 mm, 1 SP, N-type Undoped, R>50 ohm.cm Cylindrical Cell Porosity: 70~80%

Porosity: 70~80%

Resistivity:                     >40  Ohms/cm  (If you would like to measure the resistivity accurately

one 1/4" BSPP connector and one hose barb for 1/4'' I

Application Notes You may order the tope casting coater with > = 200 mm width vaccum bed for this film applicator (click Pic below left to order )

Stable in both air and water

Ge Substrate (110) 10x10x 0.5 mm, 1 SP, N-type Undoped, R>50 ohm.cm Cylindrical Cell Porosity: 70~80%Specifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohm. cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater