GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp Pouch Cell Sepecification: Apperance: White powder Viscosity:

Sepecification: Apperance: White powder Viscosity: 200300mpa

Carrier Concentration: (3

Calibration Certificate by MTI is available at extra cost

It is important to bury the tungsten coil to prevent heat dissipation

we will forward your inquiry to the manufacturer

GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp Pouch Cell Sepecification: Apperance: White powder Viscosity:GaP single crystal wafer, Size: 10mm x 10 mm x 0. 5 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x1017