3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> 3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> 3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 005 Cu (wt%) <0 – allanportilho.com

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Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 005 Cu (wt%) <0

$9457.00

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Description

005 Cu (wt%) <0

EPI polished  on one side or two sides to Ra < 10 Å

Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A

MTI's high vacuum pump with KF40 port to 80mm OD tube furnace with KF40 flange

Vacuum chuck Dimensions: 370mm(L) x 200mm(W)

Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 005 Cu (wt%) <0Such unpolished Aluminum Nitride can be placed in the center of holder for holding test samples up to 3" or 5" diam. The excellent temperature uniformity can be achieved in this 3" or 5" diam. area due to the benefit from its high thermal conductivity. Aluminum Nitride Ceramic Substrates Properties Item No. AIN Holder Purity (wt%) 99% (AN5116) Density (g cm3) >3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric

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