Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws 5" Diamond Particles Grit 280

5" Diamond Particles Grit 280 mesh ( 40 microns) Note  If you try to cut non-ferrous metal or alloy

Please click the product options bar to order

Auxiliary positioning for the position of the separator

15 g/cm^3 8

Puncture Strength :

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws 5" Diamond Particles Grit 280Silicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for