InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001

InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 000110x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1

Attention: If a gas cylinder is used instead of air compressor(pic2)

Coated area: 241mm L x 175mm W

) Dry 85120 Pouch Cell

Carrier Concentration: (1

MSK-ADR-C6 is a low-cost small dry room system with a 6 square meters ( 60 SF) area and a dew point < -40ºC

Position Thickness & accuracy Cutting thickness is controlled by digital micrometer with the accuracy of 0

Please use alcohol to clean the pressing die every time before use and store it in a dry place with antirust oil after operation to avoid rusting on the surface

Granularity (um)

1  ohm-cm

Speed Precision 0

EPI Film :

Please select the width of the slot die from the product option