Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm Al2O3 Sample Plate Thickness: 430um+/-15 um

Thickness: 430um+/-15 um

Power:                 110V

Notice: It is suggested to use an external hard drive to keep an instant backup of the collected data

3% Density > 3

Packing:            In vacuum bag

Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm Al2O3 Sample Plate Thickness: 430um+/-15 umSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater