SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm FTO Film Coated Glass Resistivity: ( 0

Resistivity:                        ( 0

Wafer size:   10 x 3 x 0

Shiny Side Roughness (RZ): 1

78 kg Force

natural defects

SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm FTO Film Coated Glass Resistivity: ( 0Specifications: Film: SiC Epi film with 3C structure grown by PECVD Thickness: 1. 0um + 10% Orientation: 3C SiC (111) Surface: CMP film chemical mechanical polished with Ra < 10 Angstrom Type and dopant: N type, Undoped Surface defects density (microscopic inspection of crystallites or other macro defects) <= 3E3cm^2 TTV 5 29 Bow 9 ~ 3 Silicon substrate: Size: 10x10 x 1. 0 mm thickness Orientation: (111) Type: N type P doped Resistivity: 1 10 ohm. cm