Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp Assorted

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp AssortedSpecifications: Cu coated SiO2 Si Wafer (5x5 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 5x5x0. 5 mm SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order

Ra(Average Roughness) :   < 0

Wafer Size:                    10 x 3 x0

Custom compounds are available with improved chemical and low-temperature resistance

Die Sleeve Height: 50mm

MSDS DOWNLOAD

94 36 20 ns @ 470nm

Packing:            In vacuum bag

8 polymer battery analyzer clamp with temperature detector and cable for universal connecting (compatible for pouch cell and cylindrical cell

Mobility:                            5350-6380 cm^2/v

This series provides a safe and convenient packing and delivery solution for bare die

Conductor type:               N-type

2 side polished