GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp Orientation 010 Please browse our FH-60 for

Please browse our FH-60 for a large furnace fume hood solution

Surface finish (RMS or Ra) :  One side polished < 30A

02 mA - 10mA

05o to M-plane leftwards from the Primary

crystal purity: >99

GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp Orientation 010 Please browse our FH-60 forGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Size: 2" dia x 0. 4 mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Resistivity: (7. 49 8. 12)E 2 ohm. cm Carrier Concentration: (3. 70 4. 01)E17cm^ 3 Mobility: (208 209) cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces