SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 Manganese-rich Li1

Manganese-rich Li1

Suggested Sealing Method (parameter below may vary from case to case):

Size:                    10 mm  diameter x 0

LSAT LaAlO3  MgO Plasma Cleaner  NdCaAlO4 NdGaO3  SrTiO3 Wafer Box SrLaAlO4  Other GGG YSZ Film Coater

Surface finish (RMS or Ra) :  One side  polished < 100A  ( measued by AFM with 5x5 micron area )

SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 Manganese-rich Li1Specifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um