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VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm Orientation 210 Dimensions Controller: 235 mm L
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm Orientation 210 Dimensions Controller: 235 mm L
$425.50
Description
Dimensions Controller: 235 mm L x 200 mm W x 130 mm H
200 × 40 H (mm)
Size: 5x5x0
Heatable Ultrasonic Cleaner
Optical grade single crystal LiTaO3
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm Orientation 210 Dimensions Controller: 235 mm LGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: As Doped Conductor type: N type Resistivity: 0. 173 0. 25 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier concentration: 0. 09x10^17 1. 63x10^17 c. c
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm Orientation 210 Dimensions Controller: 235 mm L){kind=link}