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Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mA Surface roughness: Ra<10A
Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mA Surface roughness: Ra<10A
$45.94
Description
Surface roughness: Ra<10A
Working Temperature 1100ºC Max
Please must always wear protection goggles during operation
MSK-117A Edge Trimming Machine
(Dia x Height) 20mm x 1
Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mA Surface roughness: Ra<10ASpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z
Shipping Notes
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